| 发明名称 |
Method of plasma depositing silicon nitride |
| 摘要 |
<p>A method of forming silicon nitride having less 13 atomic percent hydrogen using an argon (Ar), nitrogen (N2) and a silane (SiH4) gas chemistry. In one embodiment, silicon nitride is deposited by forming a plasma from a gas mixture comprising about 100 to about 250 sccm of Ar, about 100 to about 500 sccm of N2, and about 10 to about 80 sccm of SiH4 in a plasma. <IMAGE></p> |
| 申请公布号 |
EP1168427(A1) |
申请公布日期 |
2002.01.02 |
| 申请号 |
EP20010113400 |
申请日期 |
2001.06.01 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TAN, ZHENGQUAN;KHAZENI, KASRA |
| 分类号 |
C23C16/42;C23C16/34;C23C16/507;H01J37/32;H01L21/318;(IPC1-7):H01L21/318 |
主分类号 |
C23C16/42 |
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