发明名称 |
Method for manufacturing semiconductor device |
摘要 |
Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign matter by using both an electric action of a plasma generated by plasma generation means and a physical action caused by a frictional stress of a fast gas stream formed by a pad structure which is arranged close to a wafer surface.
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申请公布号 |
US2002094691(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010939770 |
申请日期 |
2001.08.28 |
申请人 |
HITACHI, LTD. |
发明人 |
YOKOGAWA KENETSU;MOMONOI YOSHINORI;TSUJIMOTO KAZUNORI;TACHI SHINICHI |
分类号 |
H05H1/46;B01J19/00;B01J19/08;H01L21/00;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;H01L21/461;(IPC1-7):H01L21/461 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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