| 摘要 |
Each of channel regions 2 a and 3 b is covered by a gate electrode 6 via a gate insulation film 5 and side wall spacers 9 from its top face to both side faces along an x-direction. In other words, there is no insulation material of an STI element isolation structure 4 on both side faces along the x-direction of each of the channel regions 2 b and 3 b (in a non-contact state), thereby preventing stress in a z-direction from being applied by the STI element isolation structure 4 to each of the channel region 2 b and 2 b.
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