| 摘要 |
Means and methods are provided for trench TMOS devices ( 41 - 10, 11, 12 ), comprising, providing a first semiconductor ( 53, 53' ) of a first composition having an upper surface ( 541 ), with a body portion ( 54 ) proximate the upper surface ( 541 ), a drift portion ( 46, 83 ) spaced apart from the upper surface ( 541 ) and a trench ( 49, 49' ) having sidewalls ( 493 ) extending from the upper surface ( 541 ) into the drift portion ( 46, 83 ). A second semiconductor ( 56 ) adapted to provide a higher mobility layer is applied on the trench sidewalls ( 493 ) where parts ( 78 ) of the body portion ( 54 ) are exposed. A dielectric ( 70 ) covers the higher mobility layer ( 56 ) and separates it from a control gate ( 72 ) in the trench ( 49, 49' ). Source regions ( 68 ) formed in the body portion ( 54 ) proximate the upper surface ( 491 ) communicate with the higher mobility layer ( 56 ). When biased, source-drain current ( 87, 87' ) flows from the source regions ( 68 ) through gate induced channels ( 78 ) in the higher mobility layer ( 56 ) and into the drift portion ( 46, 83 ) where it is extracted by a drain ( 42 ) or other connection coupled to the drift portion ( 46, 83 ).
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