| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal polishing solution for chemical mechanical polishing which has a high polishing speed, can improve planarity and prevents a groove from being easily formed between a wiring and an insulating layer. SOLUTION: The metal polishing solution to be used for chemical mechanical polishing of a semiconductor device contains silica sol and an aromatic compound having at least any one of a sulfo group and a carboxyl group as a substituent or formalin condensate of its salt. COPYRIGHT: (C)2008,JPO&INPIT |
