PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS

摘要

A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.