| 发明名称 |
PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element and piezoelectric thin film device having less leakage current and less driving-originated deterioration of a piezoelectric constant. <P>SOLUTION: The piezoelectric thin film element includes, on a substrate 1: a lower electrode 2; a piezoelectric thin film 3 with an alkaline niobium oxide perovskite structure expressed by composition formula (K<SB>1-x</SB>Na<SB>x</SB>)NbO<SB>3</SB>; and an upper electrode 4. The composition ratio x of the piezoelectric thin film 3 expressed by (K<SB>1-x</SB>Na<SB>x</SB>)NbO<SB>3</SB>is in the range of 0.4≤x≤0.7, and the half width of the rocking curve of a (001) face in X-ray diffraction measurement is 0.5° or greater and 2.5° or less. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011146623(A) |
申请公布日期 |
2011.07.28 |
| 申请号 |
JP20100007942 |
申请日期 |
2010.01.18 |
| 申请人 |
HITACHI CABLE LTD |
发明人 |
SHIBATA KENJI;SUENAGA KAZUFUMI;NOMOTO AKIRA;WATANABE KAZUTOSHI |
| 分类号 |
H01L41/18;C04B35/00;C23C14/06;H01L41/08;H01L41/09;H01L41/187;H01L41/22;H01L41/29;H01L41/316;H01L41/39 |
主分类号 |
H01L41/18 |
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