| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device.SOLUTION: A semiconductor device according to an embodiment comprises: a first electrode; a first semiconductor layer of a first conductivity type connected with the first electrode; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a third semiconductor layer of the first conductivity type provided on the second semiconductor layer; a second electrode provided on and connected with the third semiconductor layer; a third electrode opposed to the second semiconductor layer via an insulating film; and a fourth electrode whose upper end is connected with the second electrode, and that is separated from the first semiconductor layer, the second semiconductor layer, the third semiconductor layer and the third electrode via the insulating film. A resistivity of the second electrode is lower than that of the fourth electrode.SELECTED DRAWING: Figure 1 |
