SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce leakage current while reducing current collapse.SOLUTION: A semiconductor device 1 includes: a compound semiconductor layer 13 provided on a substrate 10; a compound semiconductor layer 14 which is provided on the compound semiconductor layer 13 and has a band gap larger than that of the compound semiconductor layer 13; and a gate electrode 17 provided on the compound semiconductor layer 14. A gate length of the gate electrode 17 is larger than twice the thickness of the compound semiconductor layer 13 and not larger than five times the thickness of the compound semiconductor layer 13.SELECTED DRAWING: Figure 1