WAFER-LEVEL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application.

主权项

1. A wafer-level semiconductor device, comprising:
a wafer-level substrate, a plurality of serial groups which are formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel group comprising a plurality of unit cells disposed in parallel, each unit cell being an independent functional unit which is formed by processing a semiconductor layer directly grown on the surface of the substrate; and a lead, which is at least electrically connected between one selected parallel group in each serial group and one electrode of the semiconductor device and/or between two selected parallel groups to make ON-voltages of all the serial groups substantially consistent.