Semiconductor device and manufacturing method thereof

摘要

To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a semiconductor layer; forming a first protective film having conductivity over the semiconductor layer; forming a conductive film containing copper, aluminum, gold, or silver over the first protective film; forming a second protective film over the conductive film; processing the second protective film to form a second protective layer; processing the conductive film to form a conductive layer; forming a third protective film in contact with a side surface and a top surface of the second protective layer and a side surface of the conductive layer; and processing the third protective film and the first protective film by anisotropic etching to form a third protective layer in contact with the side surface of the conductive layer and a first protective layer between the conductive layer and the semiconductor layer, respectively.