| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a simple method of exposure for forming a pattern with high precision of size control by lowering variation of pattern size generated near the limit of resolution. SOLUTION: In this method of exposure, each shading pattern of various size and density included in the exposure photo mask is formed in the predetermined size by uniformly providing negative bias, regardless of the size and form of the pattern, to the pattern size on the mask considering a projection magnification against the pattern formed on the substrate. The optimum bias and exposure are determined by obtaining the relation between the size of mask pattern and the exposure giving a designed size by means of experiment, simulation and the like for each shading pattern and convergence of the above relation for each shading pattern.</p> |
