METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

摘要

A method for producing a silicon single crystal by the CZ method, characterized in that an inner diameter (c) of a crucible (32) having a silicon raw material therein is 2 to 2.5 times an intended diameter (d) of the silicon single crystal (1) to be produced, and the silicon single crystal is pulled up in a manner wherein the minimum value of a ratio (V/Gs) in the direction of diameter of a velocity (V) of pulling up to a temperature gradient (Gs) in the interface between solid and liquid in the crystal is 0.3 mm<2>/K < min or more. The method allows the decrease of the temperature gradient (G1) in a melt, the increase of the maximum velocity of pulling up, and the suppression of occurrence of an OSF ring, by the use of the ordinary CZ method, with ease and simplicity, and at a low cost.