METHOD FOR PRODUCING SILICON WAFER AND EPITAXIAL WAFER, AND EPITAXIAL WAFER

摘要

A method of producing a silicon wafer from a silicon single crystal being grown by the CZ method and doped with nitrogen, characterized in that nitrogen is doped in a concentration of 1 X 10<14> pieces/cm<3> or less, and, in growing the silicon single crystal, the ratio (V/G) of a pulling rate (V) to a solid-liquid interface temperature gradient (G) is adjusted so as to provide a prescribed density of BMD generated after the formation of an epitaxial layer on the silicon wafer produced; a method for producing an epitaxial wafer comprising forming an epitaxial layer on a silicon wafer produced by the method; and an epitaxial wafer produced by this method. Those methods can be employed for producing a substrate for an epitaxial wafer which is suppressed in the generation of crystal defects during epitaxial growth on a silicon single crystal wafer doped with nitrogen having been grown by the CZ method and also has excellent IG capability, and for producing an epitaxial wafer using the substrate.