| 摘要 |
<p>The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device ( 100 ) , among other steps, includes forming a gate structure ( 120 ) over a substrate ( 110 ) and forming source/drain regions ( 190 ) in the substrate ( 110 ) proximate the gate structure ( 120 ). The method further includes subjecting the gate structure ( 120 ) and substrate ( 110 ) to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains ( 320 ) subsequent to subjecting the gate structure ( 120 ) and substrate ( 110 ) to the dry etch process. Thereafter, the method includes forming metal silicide regions ( 510, 520 ) in the gate structure ( 120 ) and the fluorinated source/drains ( 320 ).</p> |
