| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to downsize the whole size of a chip by reducing the number of devices required for a NOR gate construction. A semiconductor substrate(100) has a source/drain region(120), and a gate electrode(130) is formed on the substrate. A spacer is formed at a side of the gate electrode, and interlayer dielectrics(150,151) are formed on the substrate and the gate electrode, in which plural contact holes are formed in the interlayer dielectrics. A contact plug is formed in the contact hole, and has a first contact plug(171) and a second contact plug(172) electrically connected to the gate electrode, and a third contact plug(173) and a fourth contact plug(174) electrically connected to the source/drain region.</p> |
