| 摘要 |
PROBLEM TO BE SOLVED: To provide a water-resistant insulating film for a semiconductor device with the characteristics of a low dielectric constant, a low leakage current and high mechanical strength, in which change with time of the characteristics is little, to provide a manufacturing apparatus of the insulating film, and to provide a manufacturing method of the semiconductor device using the insulating film for the semiconductor device. SOLUTION: The manufacturing method of the semiconductor device includes: a film deposition process of supplying a mixed raw material gas containing a carrier gas and a raw material gas consisting of a vaporized material having borazine skeleton-based molecules into a chamber, turning a gas mixture to a plasma state, applying bias to a substrate placed inside the chamber, executing vapor phase polymerization with the borazine skeleton based molecule as a base unit, and depositing the insulating film for the semiconductor device on the substrate mounted inside the chamber; and a reaction accelerating process of turning the bias to be applied to the substrate after the film deposition process to a magnitude different from the one of the bias in the film deposition process, supplying only the raw material gas obtained by evaporating a material having a borazine skeleton based molecule while gradually reducing it, and treating the film with plasma which is mainly the carrier gas. COPYRIGHT: (C)2009,JPO&INPIT
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