NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element (HEMT) which can achieve normally-OFF operation and have a desired gate threshold voltage. SOLUTION: The HEMT has a nitride semiconductor multilayer structure portion 2 where an intrinsic GaN layer 3 and an n-type AlGaN layer 4 are laminated. The nitride semiconductor multilayer structure portion 2 has striped linear portions 10 and an island-shaped confluence portion 11. The plurality of linear portions 10 are separated from one another by striped trenches 6 formed between adjacent linear portions 10. A gate electrode 13 is opposed to a lamination boundary 7 of a linear portion 10 which is exposed in a trench 6 with a gate insulating film 12 interposed. Further, a source electrode 14 and a drain electrode 15 are formed in contact with the n-type AlGaN layer 4 at a source-side confluence portion 11S and a drain-side confluence portion 11D. COPYRIGHT: (C)2009,JPO&INPIT