| 摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of a contacting area of a semiconductor layer with its electrode layer on the top surface of the waveguide ridge of a semiconductor optical element to prevent the etching damage of the semiconductor layer. SOLUTION: This manufacturing method of a semiconductor optical element has a process for laminating, on a semiconductor layer, an SiO<SB>2</SB>film 75 having a thickness of (da) and having an etching rate of (Ra) in BHF to form a resist pattern 76 and to form a waveguide ridge 40; a process, while leaving the resist pattern 76 on the waveguide ridge 40, for covering the waveguide ridge 40 with an SiN film 78 that, when making its film thickness (db) and making its etching rate (Rb) in BHF, satisfies a relation of 1<(db/Rb)/(da/Ra); and a process for removing, by a lift-off method, the SiN film 78 present on the resist pattern to form an opening 44a in the SiN film 78, and thereafter, while leaving the SiN film 78 in a portion other than the waveguide ridge 40, by performing a wet etching using the BHF during a predetermined period of time, for removing the SiO<SB>2</SB>film 75 present on the waveguide ridge 40 to expose the surface of a p-GaN layer 74 of the waveguide ridge 40 and forming an electrode layer 46. COPYRIGHT: (C)2009,JPO&INPIT
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