| 摘要 |
The semiconductor device and the lay-out method are provided to obtain the various electrical characteristic according to the length of the gate and to reduce the area of the lay-out of the circuit. The semiconductor device comprises the gate pattern(GP) having firsts and the second gate electrode(G3,G4) and the active pattern(AP) in which the source and drain region(S,D) are formed. The gate pattern comprises the gate electrode of short length and the gate electrode of long length. The one side of each gate electrode is arranged in the width direction. The second gate electrode has the length L5 which is longer than the length L3 of the first gate electrode as L4. Each gate electrode has the bar shape. The active pattern includes the channel region, the source area and the drain region.
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