| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, such as a high-electron-mobility transistor and a magnetic sensor, which supplies electrons generated by an electron supply layer to an electron traveling layer more efficiently and makes the most of characteristics of the electron traveling layer with high mobility. SOLUTION: The semiconductor device 1 has a multilayer film structure composed of: a semiconductor substrate 1; a buffer layer 2 formed on the semiconductor substrate; the electron traveling layer 3 formed on the buffer layer; a spacer layer 4 formed on the electron traveling layer; an electron supply layer 5 formed on the spacer layer; a barrier layer 6 formed on the electron supply layer; and a cap layer 7 formed on the barrier layer. The electron affinity of a semiconductor forming the electron supply layer is made smaller than the electron affinity of a semiconductor forming the spacer layer below the electron supply layer. COPYRIGHT: (C)2009,JPO&INPIT |
