METHODS FOR SELECTIVELY REMOVING INSULATION LAYER IN SILICON ON INSULATOR SUBSTRATE AND FABRICATING MICRO ELECTRO MECHANICAL SYSTEMS USING THE SAME

摘要

A method for selectively removing an insulating layer of an SOI substrate and a method for manufacturing a MEMS(Micro Electro Mechanical System) are provided to suppress the damage in a structure formed on a silicon layer due to the leakage of an etchant. An SOI(Silicon On Insulator) substrate includes a first silicon layer(11), a second silicon layer(12), and an interlayer insulating layer(13) formed between the first and second silicon layers. The interlayer insulating layer is partially exposed by etching the first silicon layer. A passivation layer(20) is formed by coating the polymer in the first silicon layer. The interlayer insulating layer is partially exposed by etching the second silicon layer. The interlayer insulating layer is removed by performing a wet etching process to permeate an etchant to the exposed interlayer insulating layer from the second silicon layer.