| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wafer polishing composition which is suitable for polishing a germanium wafer. <P>SOLUTION: A thick liquid is prepared by mixing 80 pts.wt. of 50% colloidal silica, 5.0 pts.wt. of 35% oxygenated water, 0.5 pts.wt. of a 60% hydroxy ethyl diphosphonic acid, 3.40 pts.wt. of a 10% potassium hydroxide and 11.1 pts.wt. of water. It has pH of 10.11. A wafer polishing solution composition is obtained by adding and mixing 100 pts.wt. of pure water to 100 pts.wt. of the thick liquid. When a germanium wafer is polished while supplying the obtained wafer polishing liquid composition to a polishing pad of a one-sided polisher, a polishing surface is obtained with low surface roughness (Ra) and few scratches and flaws. <P>COPYRIGHT: (C)2007,JPO&INPIT |
