Protection devices

摘要

In accordance with an embodiment of the present invention, a semiconductor package includes a die paddle and a protection device disposed over the die paddle. The protection device includes a first heat generating zone disposed in a substrate. The first heat generating zone is disposed at a first side facing the die paddle. A solder layer at the first heat generating zone joins the protection device with the die paddle.

主权项

1. A semiconductor package comprising:
a die paddle; a P/N diode disposed over the die paddle, wherein the P/N diode comprises a first doped region having a first doping type disposed in a substrate having a second doping type opposite to the first doping type, wherein the first doped region is disposed at a first side facing the die paddle; a metal pad disposed over the first doped region, the metal pad being coplanar with a major surface of the substrate and covering the first doped region but not all of the major surface of the substrate; a solder layer at the metal pad joining the P/N diode with the die paddle; and a blanket metallic layer disposed over a second side of the P/N diode and covering all of a major surface of the substrate and a portion of sidewalls of the substrate.