发明名称 |
Open Erase Block Read Automation |
摘要 |
Systems, methods, and/or devices are used to automate read operations performed at an open erase block. In one aspect, the method includes: receiving a read command, at a storage device, to read data from non-volatile memory of the storage device. In response to receiving the read command, the method further includes: 1) reading data using a first set of memory operation parameters in response to a determination that the read command is not for reading data from a predefined portion of an open erase block (e.g., an erase block that is determined to be an open erase block) of the non-volatile memory and 2) reading data using a second set of memory operation parameters (i.e., the second set is distinct from the first set) in response to a determination that the read command is for reading data from the predefined portion of an open erase block of the non-volatile memory. |
申请公布号 |
US2016306591(A1) |
申请公布日期 |
2016.10.20 |
申请号 |
US201514925943 |
申请日期 |
2015.10.28 |
申请人 |
SanDisk Enterprise IP LLC |
发明人 |
Ellis Robert W.;Mohan Vidyabhushan;Frayer Jack Edward |
分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A method of managing a storage device that includes non-volatile memory, the method comprising:
receiving at the storage device a read command to read data from the non-volatile memory of the storage device; in response to receiving the read command,
determining whether the read command is for reading data from a predefined portion of an erase block of the non-volatile memory that is an open erase block;in response to a determination that the read command is not for reading data from the predefined portion of an open erase block of the non-volatile memory, reading data from the non-volatile memory using a first set of memory operation parameters; andin response to a determination that the read command is for reading data from the predefined portion of an open erase block of the non-volatile memory, reading data from the non-volatile memory using a second set of memory operation parameters that is different from the first set of memory operation parameters. |
地址 |
Milpitas CA US |