发明名称 Open Erase Block Read Automation
摘要 Systems, methods, and/or devices are used to automate read operations performed at an open erase block. In one aspect, the method includes: receiving a read command, at a storage device, to read data from non-volatile memory of the storage device. In response to receiving the read command, the method further includes: 1) reading data using a first set of memory operation parameters in response to a determination that the read command is not for reading data from a predefined portion of an open erase block (e.g., an erase block that is determined to be an open erase block) of the non-volatile memory and 2) reading data using a second set of memory operation parameters (i.e., the second set is distinct from the first set) in response to a determination that the read command is for reading data from the predefined portion of an open erase block of the non-volatile memory.
申请公布号 US2016306591(A1) 申请公布日期 2016.10.20
申请号 US201514925943 申请日期 2015.10.28
申请人 SanDisk Enterprise IP LLC 发明人 Ellis Robert W.;Mohan Vidyabhushan;Frayer Jack Edward
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A method of managing a storage device that includes non-volatile memory, the method comprising: receiving at the storage device a read command to read data from the non-volatile memory of the storage device; in response to receiving the read command, determining whether the read command is for reading data from a predefined portion of an erase block of the non-volatile memory that is an open erase block;in response to a determination that the read command is not for reading data from the predefined portion of an open erase block of the non-volatile memory, reading data from the non-volatile memory using a first set of memory operation parameters; andin response to a determination that the read command is for reading data from the predefined portion of an open erase block of the non-volatile memory, reading data from the non-volatile memory using a second set of memory operation parameters that is different from the first set of memory operation parameters.
地址 Milpitas CA US