发明名称 |
SEMICONDUCTOR LIGHT TRAP DEVICES |
摘要 |
Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art. |
申请公布号 |
US2016343886(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615227353 |
申请日期 |
2016.08.03 |
申请人 |
Infineon Technologies Dresden GmbH |
发明人 |
Kautzsch Thoralf |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a silicon structure having an exposed surface to be exposed to light rays, the surface having a exposed surface plane, the exposed surface defining refractive facets that are angled to be non-parallel to the surface plane; a photoelectrically active portion located beneath the surface within the silicon structure; and an internal structure located beneath the active portion, the internal structure having an interface surface, at least part of the interface surface being generally parallel to the exposed surface plane and at which total internal reflection of light rays occurs such that at least some of the light rays are redirected toward the photoelectrically active portion. |
地址 |
Dresden DE |