| 摘要 |
The present disclosure pertains to a solid-state imaging device and an electronic device which are able to improve focus detection accuracy. In a phase difference detecting pixel, an interlayer film is formed on a semiconductor substrate which has a Si PD formed thereon, in the same manner as in an imaging pixel. However, unlike an imaging pixel, the interlayer film includes a light-shielding film 35 so as to shield a half of the phase difference detecting pixel from light, and does not have an organic photoelectric conversion film disposed at the light incident side (on the interlayer film) outside the semiconductor substrate. The present disclosure is applicable to, for example, a CMOS solid-state imaging device in which an organic film is used for a photoelectric conversion section. |
