| 摘要 |
PURPOSE: To improve electricity capacity in manufacturing a capacitor, enlarge thickness of a poly silicon film. As the result of it, manufacturing price becomes higher and the productivity becomes lowered. And to get needed electricity capacity adding process of HSG film is needed. CONSTITUTION: The method comprises the following steps. a step forming a contact hall on the semiconductor substrate having a substructure, a step forming a poly-silicone film with a fixed thickness over the substructure filling the contact hall, a step forming a pillar shaped poly-silicone pattern, a step forming a photoresist pattern on the poly-silicone pattern to exposure a fixed part toward the diameter of poly-silicone pattern, a step that forming a storage electrode by etching masking the photoresist pattern and piercing and etching the poly-silicone pattern in the way of the diameter of it and a step forming a plate electrode on a dielectric layer. The surface of the storage electrode is enlarged and electricity capacity is enhanced by changing the pattern of the storage electrode of an element in manufacturing a semiconductor element.
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