| 摘要 |
<p>A method and circuit are disclosed for maintaining stored data within a ferroelectric memory device. The circuit includes a first circuit for selectively logically inverting the data in the ferroelectric memory device. A second circuit enables the first circuit at the one or more predetermined times. A third circuit logically inverts data to be written to and data read from the ferroelectric memory device following every other predetermined time. In this way, the circuit is capable of inverting the data values stored in the ferroelectric memory device, thereby reducing the susceptibility of imprint.</p> |
