| 摘要 |
PROBLEM TO BE SOLVED: To provide: a magnetoresistive film in which the influence of roughness of an anti-ferromagnetic layer is reduced, an interlayer coupling magnetic field Hin is small, and variations in characteristics are small; a magnetic head; a magnetic disc device; a magnetic memory device; and a method for manufacturing the magnetoresistive film. SOLUTION: In a magnetoresistive film 10, in which a base layer 11, an anti-ferromagnetic layer 12, a fixed ferromagnetic layer 13, a non-magnetic intermediate layer 14, a reference layer 15, a barrier layer 16, and a free ferromagnetic layer 17 are formed above a substrate 19, the fixed ferromagnetic layer 13 has a laminated structure in which a first ferromagnetic layer 13a, an oxide layer 13b, and a second ferromagnetic layer 13c are formed in order from the side of the substrate 19. The oxide layer 13b fills the roughness on the surface of the first ferromagnetic layer 13a and as a result, the surface of the oxide layer 13b becomes substantially flat. Accordingly, the roughness of the barrier layer 16 formed thereabove is improved, thereby obtaining the magnetic resistance effect film 10, in which the interlayer coupling magnetic field Hin is small and variations in characteristics are small. COPYRIGHT: (C)2009,JPO&INPIT
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