发明名称 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
摘要 The present invention provides a memory device with an increased bandwidth and a memory system including the same. The memory device comprises: a first memory bank including a first memory block and a second memory block; a second memory bank including a third memory block and a fourth memory block; and a bank selection unit for selecting a memory bank corresponding to a bank address from the first and the second memory banks when an active command is applied. The memory bank selected by the bank selection unit allows row access to a word line of an unselected memory block while activating a word line of a memory block selected by a block address among the memory blocks of the selected memory bank.
申请公布号 KR20160063726(A) 申请公布日期 2016.06.07
申请号 KR20140167376 申请日期 2014.11.27
申请人 SK HYNIX INC. 发明人 SHIN, SUN HYE;PARK, NAK KYU
分类号 G11C11/4063;G11C11/408 主分类号 G11C11/4063
代理机构 代理人
主权项
地址
您可能感兴趣的专利