发明名称 |
MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME |
摘要 |
The present invention provides a memory device with an increased bandwidth and a memory system including the same. The memory device comprises: a first memory bank including a first memory block and a second memory block; a second memory bank including a third memory block and a fourth memory block; and a bank selection unit for selecting a memory bank corresponding to a bank address from the first and the second memory banks when an active command is applied. The memory bank selected by the bank selection unit allows row access to a word line of an unselected memory block while activating a word line of a memory block selected by a block address among the memory blocks of the selected memory bank. |
申请公布号 |
KR20160063726(A) |
申请公布日期 |
2016.06.07 |
申请号 |
KR20140167376 |
申请日期 |
2014.11.27 |
申请人 |
SK HYNIX INC. |
发明人 |
SHIN, SUN HYE;PARK, NAK KYU |
分类号 |
G11C11/4063;G11C11/408 |
主分类号 |
G11C11/4063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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