| 摘要 |
Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ∈(−), and a dielectric loss tan δ(−) satisfy (d31)2/(∈×tan δ×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided. Pbx[(ZraTi1−a)1−yNby]Oz  (P) (in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.) |
