Coarse Grid Design Methods and Structures

摘要

A layer of a mask material is deposited on a substrate. A beam of energy is scanned across the mask material in a rasterized linear pattern and in accordance with a scan pitch that is based on a pitch of conductive structure segments to be formed on the substrate. The beam of energy is defined to transform the mask material upon which the beam of energy is incident into a removable state. During scanning the beam of energy across the mask material, the beam of energy is turned on at locations where a conductive structure is to be formed on the substrate, and the beam of energy is turned off at locations where a conductive structure is not to be formed on the substrate.

主权项

1. A semiconductor device, comprising:
a first linear-shaped gate level conductive structure having a length as measured in a first direction and a width as measured in a second direction perpendicular to the first direction, the first linear-shaped gate level conductive structure having a lengthwise centerline oriented in the first direction; a second linear-shaped gate level conductive structure having a length as measured in the first direction and a width as measured in the second direction, the second linear-shaped gate level conductive structure having a lengthwise centerline oriented in the first direction, the lengthwise centerline of the second linear-shaped gate level conductive structure separated from the lengthwise centerline of the first linear-shaped gate level conductive structure by a gate pitch as measured in the second direction, a portion of the second linear-shaped gate level conductive structure positioned next to a portion of the first linear-shaped gate level conductive structure; a first contact structure formed to connect to the portion of the first linear-shaped gate level conductive structure that is positioned next to the portion of the second linear-shaped gate level conductive structure; a second contact structure formed to connect to the portion of the second linear-shaped gate level conductive structure that is positioned next to the portion of the first linear-shaped gate level conductive structure; and a linear-shaped interconnect level conductive structure having a length as measured in the second direction and a width as measured in the first direction, the linear-shaped interconnect level conductive structure positioned to extend over and connect to both the first contact structure and the second contact structure.