METHODS OF PERFORMING FIN CUT ETCH PROCESSES FOR FINFET SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES

摘要

A method includes forming a plurality of fins above a substrate. A first mask layer is formed above a first subset of the fins. First portions of the fins in the first subset exposed by a first opening in the first mask layer are removed to define, for each of the fins, a first fin segment and a second fin segment, each having a cut end surface. A first liner layer is formed on at least the cut end surface of the first fin segment for each of the fins in the first subset. A second mask layer having a second opening is formed above a second subset of the plurality of fins. An etching process removes second portions of the second subset of fins exposed by the second opening. The first liner layer protects the cut end surface of at least the first fin segment during the removing.

主权项

1. A method, comprising:
forming a plurality of fins above a substrate; forming a first mask layer above a first subset of said plurality of fins, said first mask layer having a first opening defined therein; removing a first portion of each of the fins in said first subset exposed by said first opening to define, for each of the fins in said first subset, a first fin segment and a second fin segment, each having a cut end surface; forming a first liner layer on at least said cut end surface of said first fin segment for each of the fins in said first subset; forming a second mask layer above a second subset of said plurality of fins, said second mask layer having a second opening; and performing an etching process to remove second portions of said second subset of fins exposed by said second opening, wherein said first liner layer protects said cut end surface of at least said first fin segment during the removing.