| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM |
| 摘要 |
A semiconductor memory device includes a first stack of memory cells above a substrate, the first stack including a first memory cell and a second memory cell above the first memory cell, a second stack of memory cells above the substrate, the second stack including a third memory cell, a word line connected to the first, second, and third memory cells, and a controller configured to output data stored in the first memory cell and data stored in the third memory cell during a first cycle, and output data stored in the second memory cell during a second cycle that is different from the first cycle. |
| 申请公布号 |
US2016254059(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615053939 |
申请日期 |
2016.02.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OCHI Yusuke;SHIRAKAWA Masanobu |
| 分类号 |
G11C16/26;G06F11/10;G11C29/52;G11C16/34 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a first stack of memory cells above a substrate, the first stack including a first memory cell and a second memory cell above the first memory cell; a second stack of memory cells above the substrate, the second stack including a third memory cell; a word line connected to the first, second, and third memory cells; and a controller configured to output data stored in the first memory cell and data stored in the third memory cell during a first cycle, and output data stored in the second memory cell during a second cycle that is different from the first cycle. |
| 地址 |
Tokyo JP |
