Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems

摘要

A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

主权项

1. A memory cell, comprising:
a magnetic cell core comprising:
a seed region consisting of cobalt, iron, and boron;a nonmagnetic region over and in contact with the seed region, the nonmagnetic region having a bcc (001) crystalline structure and consisting of a nonmagnetic oxide material;a free region over the nonmagnetic region;another nonmagnetic region over the free region; anda fixed region over the another nonmagnetic region,the seed region configured to not exhibit magnetism affecting the free region.