发明名称 Grain growth for solar cells
摘要 A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions of the silicon layer can have a grain size larger than other portions of the silicon layer. For example, larger grains of the silicon layer formed within a depletion region between P-type and N-type doped regions can minimize recombination loss at the P-type and N-type doped region boundaries and improve solar cell efficiency.
申请公布号 US9466754(B2) 申请公布日期 2016.10.11
申请号 US201414447526 申请日期 2014.07.30
申请人 SunPower Corporation 发明人 Kim Taeseok
分类号 H01L21/00;H01L31/18;B29D11/00;H01L31/028;H01L31/0368 主分类号 H01L21/00
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of fabricating a solar cell, the method comprising: forming upper regions, angled regions and lower regions of a silicon substrate, wherein the upper regions and the lower regions are substantially coplanar; forming a silicon layer over the silicon substrate; applying a laser to the silicon layer resulting in portions of the silicon layer over the upper regions and lower regions having a larger grain size than other portions of the silicon layer over angled regions of the silicon substrate; and driving dopants into the silicon layer resulting in P-type doped regions and N-type doped regions, the P-type doped regions and N-type doped regions abutting in a contiguous portion of the silicon layer.
地址 San Jose CA US