发明名称 |
Grain growth for solar cells |
摘要 |
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions of the silicon layer can have a grain size larger than other portions of the silicon layer. For example, larger grains of the silicon layer formed within a depletion region between P-type and N-type doped regions can minimize recombination loss at the P-type and N-type doped region boundaries and improve solar cell efficiency. |
申请公布号 |
US9466754(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201414447526 |
申请日期 |
2014.07.30 |
申请人 |
SunPower Corporation |
发明人 |
Kim Taeseok |
分类号 |
H01L21/00;H01L31/18;B29D11/00;H01L31/028;H01L31/0368 |
主分类号 |
H01L21/00 |
代理机构 |
Blakely Sokoloff Taylor Zafman LLP |
代理人 |
Blakely Sokoloff Taylor Zafman LLP |
主权项 |
1. A method of fabricating a solar cell, the method comprising:
forming upper regions, angled regions and lower regions of a silicon substrate, wherein the upper regions and the lower regions are substantially coplanar; forming a silicon layer over the silicon substrate; applying a laser to the silicon layer resulting in portions of the silicon layer over the upper regions and lower regions having a larger grain size than other portions of the silicon layer over angled regions of the silicon substrate; and driving dopants into the silicon layer resulting in P-type doped regions and N-type doped regions, the P-type doped regions and N-type doped regions abutting in a contiguous portion of the silicon layer. |
地址 |
San Jose CA US |