Method for creating contacts in semiconductor substrates

摘要

Techniques include methods for creating contacts for microchips, solar films, etc., for electrically connecting conductive elements and/or for current spreading. Embodiments herein include using an oversized “board” or contact array positioned between a lower layer and an upper layer. This contact array is created by directed self-assembly (DSA) of block copolymers. The lower and upper layers can have conductive structures such as lines. The oversized board can be comprised of hundreds, thousands, millions (etc.) of small conductive contact cylinders, lines or other vertical structures, with each conductive structure electrically isolated from adjacent conductive structures in the array. A crossover location of a line on a lower level with a line on an upper level is connected with multiple conductive structures located at the cross over location.

主权项

1. A method for creating electrical contacts on a substrate, the method comprising:
providing a substrate having a first conductive structure positioned on the substrate; depositing a pre-pattern layer configured to enable directed self-assembly of block copolymers, the pre-pattern layer defining a contact location to connect the first conductive structure on a lower layer with a second conductive structure on an upper layer; depositing a block copolymer film on the substrate; activating phase separation of the block copolymer film such that a first assembled polymer forms an array of cylinders at the contact location surrounded by a second assembled polymer; removing the first assembled polymer while the second assembled polymer remains on the substrate and defines an array of cylindrical openings; forming a vertical contact by filling the array of cylindrical openings with an electrically conductive material; and depositing the second conductive structure on the block copolymer film such that the second conductive structure is in electrical contact with the vertical contact and crosses at least a portion of the vertical contact, wherein the first conductive structure and the second conductive structure are lines that elevationally cross each other such that a projected overlap area of the first conductive structure and the second conductive structure is less than a surface area of the defined contact location.