Interconnect structures comprising flexible buffer layers

摘要

A structure includes a substrate, a low-k dielectric layer over the substrate, and a conductive barrier layer extending into the low-k dielectric layer. The conductive barrier layer includes a sidewall portion. A metal line in the low-k dielectric layer adjoins the conductive barrier layer. An organic buffer layer is between the sidewall portion of the conductive barrier layer and the low-k dielectric layer.

主权项

1. A method comprising:
forming an opening in a low-k dielectric layer comprising a single layer continuously extending from a top of the opening to a portion at bottom of the opening, with the opening exposing an underlying conductive line; coating a polymer layer into the opening; patterning the polymer layer to expose a top surface of the underlying conductive line, wherein after the patterning, a horizontal portion of the polymer layer remains to contact a top surface of the low-k dielectric layer; forming a conductive barrier layer over the polymer layer, wherein the conductive barrier layer extends into the opening to contact the underlying conductive line; filling a conductive material into a remaining portion of the opening; and performing a planarization to remove excess portions of the conductive material, the conductive barrier layer, and the polymer layer, wherein the excess portions are outside of the opening.