| 发明名称 |
Cleaning process for oxide |
| 摘要 |
A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the substrate of the first area and the second area. An ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2) containing process is performed on the first oxide layer of the first area and the second area. A photoresist layer covers the first oxide layer of the first area while exposing the first oxide layer of the second area. The first oxide layer of the second area is removed. The photoresist layer is then removed. |
| 申请公布号 |
US9466480(B2) |
申请公布日期 |
2016.10.11 |
| 申请号 |
US201414532015 |
申请日期 |
2014.11.04 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Guo Ted Ming-Lang;Chien Chin-Cheng;Liu Chueh-Yang;Yang Neng-Hui |
| 分类号 |
H01L21/8242;H01L21/02;H01L21/311 |
主分类号 |
H01L21/8242 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A cleaning process for oxide, comprising:
providing a substrate having a first area and a second area; forming a first oxide layer on the substrate of the first area and the second area; performing an ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2) containing process on the first oxide layer of the first area and the second area; after performing the ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2) containing process, covering a photoresist layer on the first oxide layer of the first area while exposing the first oxide layer of the second area; removing the first oxide layer of the second area; and removing the photoresist layer. |
| 地址 |
Hsin-Chu TW |
