发明名称 LIGHT EMITTING DIODE
摘要 The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
申请公布号 US2016329461(A1) 申请公布日期 2016.11.10
申请号 US201615135573 申请日期 2016.04.22
申请人 Genesis Photonics Inc. 发明人 Huang Yi-Ru;Chuang Tung-Lin;Lan Yan-Ting;Hsu Sheng-Tsung;Shen Chih-Ming;Huang Jing-En;Lai Teng-Hsien;Mai Hung-Chuan;Huang Kuan-Chieh;Ting Shao-Ying;Chen Cheng-Pin;Chien Wei-Chen;Cheng Chih-Chin;Tseng Chih-Hung
分类号 H01L33/10;H01L33/62;H01L33/24;H01L33/38 主分类号 H01L33/10
代理机构 代理人
主权项 1. A light emitting diode, comprising: a first-type semiconductor layer; an emitting layer a second-type semiconductor layer, wherein the emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer; a first electrode, electrically connected to the first-type semiconductor layer; a second electrode, electrically connected to the second-type semiconductor layer; and a Bragg reflector structure, wherein the first electrode and the second electrode are located on the same side of the Bragg reflector structure; a conductive layer, disposed between the Bragg reflector structure and the second-type semiconductor layer; and a plurality of insulation patterns, disposed between the conductive layer and the second-type semiconductor layer, wherein an area of the conductive layer outside the insulation patterns contacts the second-type semiconductor layer, and each of the insulation patterns has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer and an inclined surface connecting the first surface and the second surface and inclined with respect to the first surface and the second surface.
地址 Tainan City TW