Bidirectional Bipolar Transistors with Two-Surface Cellular Geometries

摘要

A two-surface bidirectional power bipolar transistor is constructed with a two-surface cellular layout. Each emitter/collector region (e.g. doped n-type) is a local center of the repeated pattern, and is surrounded by a trench with an insulated field plate, which is tied to the potential of the emitter/collector region. The outer (other) side of this field plate trench is preferably surrounded by a base connection region (e.g. p-type), which provides an ohmic connection to the substrate. The substrate itself serves as the transistor's base.

主权项

1. A bidirectional power bipolar transistor device, comprising:
a p-type semiconductor die having, on each of the two surfaces thereof, a plurality of separate n-type emitter/collector regions, each of which is surrounded by a first insulating trench; a plurality of p-type base connection regions, each surrounding one of the first insulating trenches; a p-type base connection contact region, surrounding multiple ones of the base connection regions, and set back from the insulating trenches; wherein the density of the emitter/collector regions on either of the surfaces is the same as the density of the emitter/collector regions on the other of the surfaces.