| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device forming deposited film of high quality extremely uniform in film thickness and coating quality on a substrate of a large area at a high speed and capable of efficiently forming a semiconductor device and to provide a method for forming deposited film by plasma CVD. SOLUTION: In a plasma CVD device, (1) the oscillation frequency of a high frequency power source is controllable to the range of 30 to 600 MHz, (2) a matching circuit 109 and a cathode electrode 103 are connected via a coaxial transmission line 130 composed of a columnar or cylindrical internal conductor with outside dimensions A1, a cylindrical external conductor with inside dimensions B1, and a cylindrical dielectric member with permittivityε1, high frequency electric power is transmitted via the transmission line, (3) the cathode electrode 103 is composed of a columnar or cylindrical conductive structural body with outside dimensions A2, and is covered with a cylindrical dielectric member with permittivityε2 and outside dimensions B2, and (4) the dimensions and permittivity of each member composing the transmission line and cathode electrode part satisfy the relations in the formula.
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