METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which the semiconductor device having high quality is obtained by crystal-growing group-III nitride of high quality on a sapphire substrate.

SOLUTION: An AlN layer on the sapphire substrate 2 which has been nitrided directly is irradiated with gas including nitrogen radicals or nitrogen ions from a radial source 5 for a predetermined time. Then the group-III nitride is crystal-grown by a PLD (pulse laser deposition) method of irradiating a target 3a comprising a constituent element of the group-III nitride to be grown with pulse laser light in a nitrogen atmosphere to obtain N-polar crystal having extremely high quality.

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