| 摘要 |
FIELD: electricity. ^ SUBSTANCE: invention can be used in production technologies of ohmic contact systems to photoelectric converters (PC) with high operating characteristics and namely the invention refers to formation of contacts to GaAs layers of n-type conductivity, which are front layers of the number of structures of concentrator PC, which are capable of effective conversion of incident radiation with capacity of 100-200 W/cm2. Contact formation method for nanoheterostructure of photoelectric converter involves pre-formation on surface of nanoheterostructure of photoelectric converter based on gallium arsenide of electron conductivity of topology of photo-sensitive areas by photolithography with the use of mask from upper photoresist layer and lower non-photosensitive resist layer, or mask from photoresist with profile of mask elements, which has broadening from surface of nanoheterostructure of photoelectric converter. Then, cleaning of mask-free surface of nanoheterostructure of photoelectric converter, subsequent sputtering of eutectic gold-germanium alloy layer 10-100 nm thick, nickel layer 10-20 nm thick and silver layer, and further removal of photresist and annealing of contact is performed. ^ EFFECT: invention provides the possibility of formation of multi-layer contact during one sputtering process of contact layers for nanoheterostructure of photoelectric converter based on gallium arsenide, which allows simplifying the whole contact manufacturing process. ^ 10 cl, 9 dwg |
