METHOD FOR FORMING SILICON QUANTUM DOT AND METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE USING THE SAME TO FORM SILICON QUANTUM DOT WITH SINGLE CRYSTALLINE CHARACTERISTIC AND UNIFORM CHARACTERISTIC

摘要

PURPOSE: A method for forming a silicon quantum dot is provided to form a silicon quantum dot with a single crystalline characteristic and a uniform characteristic by using a plurality of metal clusters with a uniform interval of a nano size as an etch mask. CONSTITUTION: The first insulation layer(22) is stacked on a semiconductor substrate(10). A polysilicon layer is stacked on the first insulation layer. A plurality of metal clusters with a uniform interval is formed on the polysilicon layer. The polysilicon layer is dry-etched by using the metal clusters as a mask.