ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION

摘要

An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the cerium oxide particles (99 volume% of the entire particles in the abrasive compound) is not more than 1 mum. This abrasive compound enables to reduce scratches and is capable of precisely polishing the surface of a semiconductor substrate at high speed during the wiring step in semiconductor device production.