| 摘要 |
A CMOS image sensor includes at least one of: A P-type semiconductor substrate. A P-type photodiode formed in the P-type semiconductor substrate and having a higher impurity concentration than the semiconductor substrate. An N-type photodiode disposed over the P-type photodiode at a depth less than approximately 0.15 mum from the surface of the semiconductor substrate. A depletion layer provided by junction of the P-type photodiode and the N-type photodiode.
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