发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To carry out formation of a contact portion of a resistance in a self-adjusting manner to reduce the variation of the occupation area of the contact portion and contact resistance, and thus to provide a resistance element that is micro-sized and highly precise, and yet is formed at low manufacturing costs. SOLUTION: A metal thin film is deposited on the surface of a substrate on which interconnections are formed on an insulating film. The metal thin film is etched anisotropically to leave a desired portion bridging interconnections so that the metal thin film functioning as a resistor is connected to the interconnections in a self-adjusting manner. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008226963(A) 申请公布日期 2008.09.25
申请号 JP20070059807 申请日期 2007.03.09
申请人 HITACHI LTD 发明人 SHIROMIZU NOBUHIRO;SHIMAMOTO HIROMI
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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