发明名称 |
POSITIVE RESIST COMPOSITION FOR THIN-FILM IMPLANTATION PROCESS AND METHOD FOR FORMING RESIST PATTERN |
摘要 |
A positive resist composition for a thin-film implantation process of the present invention includes: a resin component (A) with an acid-dissociable dissolution inhibiting group, whose alkali solubility increases by the action of an acid; an acid generator component (B) which generates an acid by irradiation with radiation; and a compound (C) having a radiation absorbing ability, wherein said resin component (A) comprises a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) obtained by substituting the hydrogen atom in a hydroxyl group of said structural unit (a1) with an acid-dissociable dissolution inhibiting group, and said acid-dissociable dissolution inhibiting group contains an acid-dissociable dissolution inhibiting group (II) represented by the following general formula (II) as a main component.
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申请公布号 |
US2009029291(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20060815205 |
申请日期 |
2006.02.01 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
SUZUKI TAKAKO;TANAKA KEN;YONEMURA KOJI;FUJITA SHOICHI |
分类号 |
G03C1/73;G03F7/20 |
主分类号 |
G03C1/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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