发明名称 POSITIVE RESIST COMPOSITION FOR THIN-FILM IMPLANTATION PROCESS AND METHOD FOR FORMING RESIST PATTERN
摘要 A positive resist composition for a thin-film implantation process of the present invention includes: a resin component (A) with an acid-dissociable dissolution inhibiting group, whose alkali solubility increases by the action of an acid; an acid generator component (B) which generates an acid by irradiation with radiation; and a compound (C) having a radiation absorbing ability, wherein said resin component (A) comprises a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) obtained by substituting the hydrogen atom in a hydroxyl group of said structural unit (a1) with an acid-dissociable dissolution inhibiting group, and said acid-dissociable dissolution inhibiting group contains an acid-dissociable dissolution inhibiting group (II) represented by the following general formula (II) as a main component.
申请公布号 US2009029291(A1) 申请公布日期 2009.01.29
申请号 US20060815205 申请日期 2006.02.01
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 SUZUKI TAKAKO;TANAKA KEN;YONEMURA KOJI;FUJITA SHOICHI
分类号 G03C1/73;G03F7/20 主分类号 G03C1/73
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